106 silicon npn triple diffused planar transistor (high voltage and high speed switchihg transistor) application : switching regulator and general purpose symbol v cbo v ceo v ebo i c i b p c tj t stg ratings 900 800 7 3( pulse 6) 1.5 60(tc=25?) 150 ?5 to +150 unit v v v a a w ? ? n absolute maximum ratings n electrical characteristics symbol i cbo i ebo v (br)ceo h fe v ce (sat) v be (sat) f t c ob ratings 100 max 100 max 800 min 10 to 30 0.5 max 1.2 max 15 typ 50 typ unit m a m a v v v mhz pf conditions v cb =800v v eb =7v i c =10ma v ce =4v, i c =0.7a i c =0.7a, i b =0.14a i c =0.7a, i b =0.14a v ce =12v, i e =?.3a v cb =10v, f=1mhz 2sc4445 (ta=25?) (ta=25?) i c v ce characteristics (typical) h fe i c temperature characteristics (typical) t on ? stg ? f i c characteristics (typical) q j-a t characteristics i c v be temperature characteristics (typical) v ce (sat),v be (sat) i c temperature characteristics (typical) pc ta derating reverse bias safe operating area safe operating area (single pulse) 0 0 2 1 3 2 134 collector-emitter voltage v ce (v) collector current i c (a) 500ma 300ma 200ma 100ma 50ma i b =700ma 0.1 1 0.5 2 0.1 0.5 5 7 1 switching time t on t stg t f ( s) collector current i c (a) t stg t on t f v cc 250v i c :i b1 :? b2 =10:1.5:5 60 40 20 3.5 0 0 50 100 150 ambient temperature ta(?c) maximum power dissipation p c (w) with infinite heatsink without heatsink 10 50 5 500 1000 100 1 0.5 0.1 0.05 10 5 collector-emitter voltage v ce (v) collector current i c (a) without heatsink natural cooling l=3mh i b2 =?.0a duty:less than 1% 10 50 5 100 500 1000 0.05 1 0.5 0.1 10 5 collector-emitter voltage v ce (v) collector current i c (a) without heatsink natural cooling 50 s 100 s collector-emitter saturation voltage v ce(sat) (v) base-emitter saturation voltage v be(sat) (v) 0.1 0.05 0.01 3 1 0.5 0 1 2 (i c /i b =5) collector current i c (a) v be (sat) 125?c (case temp) 25?c (case temp) ?5?c (case temp) 125?c (case temp) 25?c (case temp) ?5?c (case temp) v ce (sat) 0.3 1 4 0.5 1 10 100 1000 time t(ms) transient thermal resistance q j-a (?c/w) 0 3 1 2 0 1.2 0.4 0.6 0.8 1.0 0.2 base-emittor voltage v be (v) collector current i c (a) (v ce =4v) 125?c (case temp) 0.01 0.1 0.05 1 3 0.5 2 5 10 50 collector current i c (a) dc current gain h fe (v ce =4v) 125?c 25?c ?5?c 25?c (case temp) ?5?c (case temp) n typical switching characteristics (common emitter) v cc (v) 250 r l ( ) 357 i c (a) 0.7 v bb2 (v) ? i b2 (a) ?.35 t on ( m s) 0.7 max t stg ( m s) 4 max t f ( m s) 0.7 max i b1 (a) 0.1 v bb1 (v) 10 external dimensions fm100(to3pf) 4.4 1.5 1.5 be c 5.45 ?.1 ?.3 ?.2 1.6 3.3 1.75 0.8 ?.2 2.15 1.05 +0.2 -0.1 5.45 ?.1 23.0 ?.3 16.2 9.5 ?.2 5.5 15.6 ?.2 5.5 ?.2 3.45 3.35 0.65 +0.2 -0.1 ?.2 3.0 0.8 a b weight : approx 6.5g a. part no. b. lot no.
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